A Complementary Resistive Switch-based Crossbar Array Adder
A. Siemon, S. Menzel, R. Waser, E. Linn

TL;DR
This paper presents two novel multi-bit adder schemes using complementary resistive switches (CRSs) in ReRAM crossbar arrays, demonstrating improved efficiency over previous ReRAM-based logic approaches through SPICE simulations.
Contribution
It introduces innovative multi-bit adder schemes based on CRS technology for ReRAM arrays, enhancing logic-in-memory capabilities and efficiency.
Findings
CRS-based adders outperform previous ReRAM logic methods in step count.
Simulations confirm the feasibility of multi-bit addition with CRS devices.
Advantages include reduced device count and improved operational speed.
Abstract
Redox-based resistive switching devices (ReRAM) are an emerging class of non-volatile storage elements suited for nanoscale memory applications. In terms of logic operations, ReRAM devices were suggested to be used as programmable interconnects, large-scale look-up tables or for sequential logic operations. However, without additional selector devices these approaches are not suited for use in large scale nanocrossbar memory arrays, which is the preferred architecture for ReRAM devices due to the minimum area consumption. To overcome this issue for the sequential logic approach, we recently introduced a novel concept, which is suited for passive crossbar arrays using complementary resistive switches (CRSs). CRS cells offer two high resistive storage states, and thus, parasitic sneak currents are efficiently avoided. However, until now the CRS-based logic-in-memory approach was only…
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