Resistive switching phenomena in TiOx nanoparticle layers for memory applications

TL;DR

This paper compares resistive switching in TiOx nanoparticle layers fabricated by sol-gel and atomic layer deposition, revealing how fabrication methods influence device hysteresis and switching behavior.

Contribution

It introduces a comparative analysis of resistive memory devices made with different fabrication techniques and proposes a model explaining their distinct current-voltage characteristics.

Findings

Different hysteresis loops observed in devices from different fabrication methods.

A simple model explains the current-voltage behavior based on the number of active interfaces.

Resistive switching can be tuned through interface engineering.

Abstract

Electrical characteristics of a Co/TiO_x/Co resistive memory device, fabricated by two different methods are reported. In addition to crystalline TiO_2 layers fabricated via conventional atomic layer deposition (ALD), an alternative method has been examined, where TiO_x nanoparticle layers were fabricated via sol-gel. The different devices have shown different hysteresis loops with a unique crossing point for the sol-gel devices. A simple qualitative model is introduced to describe the different current-voltage behaviours by suggesting only one active metal-oxide interface for the ALD devices and two active metal-oxide interfaces for the sol-gel devices. Furthermore, we show that the resistive switching behaviour could be easily tuned by proper interface engineering and that despite having a similar active material, different fabrication methods can lead to dissimilar resistive switching properties.