Donor hyperfine Stark shift and the role of central-cell corrections in tight-binding theory
Muhammad Usman, Rajib Rahman, Joe Salfi, Juanita Bocquel, Benoit, Voisin, Sven Rogge, Gerhard Klimeck, Lloyd L. C. Hollenberg

TL;DR
This study uses atomistic tight-binding simulations to analyze how central-cell corrections, dielectric screening, and lattice strain affect the hyperfine Stark shift of arsenic donors in silicon, achieving close agreement with experimental data.
Contribution
It demonstrates the importance of including non-static dielectric screening and lattice strain in tight-binding models to accurately predict hyperfine Stark shifts.
Findings
Dielectric screening significantly affects the quadratic Stark shift parameter.
Lattice strain further improves the agreement with experimental measurements.
Inclusion of these effects leads to a better understanding of donor wave function behavior.
Abstract
Atomistic tight-binding (TB) simulations are performed to calculate the Stark shift of the hyperfine coupling for a single Arsenic (As) donor in Silicon (Si). The role of the central-cell correction is studied by implementing both the static and the non-static dielectric screenings of the donor potential, and by including the effect of the lattice strain close to the donor site. The dielectric screening of the donor potential tunes the value of the quadratic Stark shift parameter () from -1.3 10m/V for the static dielectric screening to -1.72 10m/V for the non-static dielectric screening. The effect of lattice strain, implemented by a 3.2% change in the As-Si nearest-neighbour bond length, further shifts the value of to -1.87 10m/V, resulting in an excellent agreement of theory with the…
Peer Reviews
No public reviews on file for this paper yet. If you reviewed it on a platform where reviews are public (OpenReview, ICLR, NeurIPS, ICML), you can paste yours below so the community can read it here.
Videos
No videos yet. Explain this paper in a talk, walkthrough, or lecture? Add one.
