Planar Hall effect in Y3Fe5O12(YIG)/IrMn films

TL;DR

This study investigates the planar Hall effect in YIG/IrMn bilayers, revealing temperature-dependent interfacial spin behavior and hysteresis effects at low temperatures, advancing understanding of spin interactions in magnetic heterostructures.

Contribution

It provides new experimental evidence of interfacial spin dynamics in YIG/IrMn films through planar Hall effect measurements at different temperatures.

Findings

IrMn exhibits temperature-dependent planar Hall resistance in YIG/IrMn.

Interfacial spins in IrMn can be influenced by the ferromagnetic YIG layer.

Hysteresis in PHR indicates irreversible spin switching at low temperature.

Abstract

The planar Hall effect of IrMn on an yttrium iron garnet (YIG = Y3Fe5O12) was measured in the magnetic field rotating in the film plane. The magnetic field angle dependence of planar Hall resistance (PHR) has been observed in YIG/IrMn bilayer at different temperatures, while the GGG/IrMn (GGG= Gd3Ga5O12) shows constant PHR for different magnetic field angles at both 10 K and 300 K. This provides evidence that IrMn has interfacial spins which can be led by FM in YIG/IrMn structure. A hysteresis can be observed in PHR-magnetic field angle loop of YIG/IrMn films at 10 K, indicating the irreversible switching of IrMn interfacial spins at low temperature.