Geometry and Self-Stress of Single-Wall Carbon Nanotubes and Graphene via a Discrete Model Based on a 2nd-Generation REBO Potential

TL;DR

This paper models the self-stress states of single-wall carbon nanotubes and graphene using a discrete elastic model with a second-generation REBO potential, revealing how atomic deformations induce intrinsic stress.

Contribution

It introduces a discrete mechanical model based on a reactive empirical bond-order potential to evaluate self-stress in CNTs and graphene, accounting for bond, angle, and dihedral variations.

Findings

Self-stress depends on bond and dihedral angles in achiral CNTs.

In chiral CNTs, self-stress involves bond length changes.

Graphene strips exhibit self-stress solely from bond angle changes.

Abstract

The main purpose of this paper is to evaluate the self-stress state of single-wall carbon nanotubes (CNTs) and flat graphene strips (FGSs) in their natural equilibrium state, that is, the state prior to the application of external loads. We model CNTs as discrete elastic structures, whose shape and volume changes are governed by a Reactive Empirical Bond-Order interatomic potential of second generation. The kinematical variables we consider are bond lengths, bond angles, and dihedral angles; to changes of each of these variables we associate a work-conjugate nanostress. To determine the self-stress state in a given CNT, we formulate the load-free equilibrium problem as a minimum problem for the interatomic potential, whose solution yields the equilibrium nanostresses; next, by exploiting the nonlinear constitutive dependence we derive for nanostresses in terms of a list of kinematical variables, we determine the equilibrium values of the latter; finally, from the equilibrium values of the kinematical variables we deduce the natural geometry and, in particular, the natural radius. In the achiral case, when we can count on maximal intrinsic symmetries and hence the number of independent unknowns is reduced to a minimum, the stationarity conditions implied by energy minimization are relatively easy to derive and solve numerically; for chiral CNTs, we prefer to solve the minimum problem directly. We surmise that our discrete mechanical model may serve as a source of benchmarks for MD simulation algorithms. We find that self-stress depends on changes in both bond and dihedral angles in achiral CNTs and, in addition, on changes in bond length in chiral CNTs. Our analysis applies also to FGSs, whose self-stress and self-energy we evaluate; we find that, in FGSs self-stress is associated exclusively with changes in bond angle.