High Resolution Parameter Space from a Two Level Model on Semi-Insulating GaAs
S. L. da Silva, E. R. Viana, A. G. de Oliveira, G. M. Ribeiro, R., L. da Silva

TL;DR
This paper introduces a new two-valley model for semi-insulating GaAs that successfully reproduces negative differential conductivity and reveals complex self-organized structures in the system's parameter space.
Contribution
The paper proposes an alternative two-valley model that captures NNDC in SI-GaAs and constructs a detailed high-resolution parameter space revealing complex chaotic structures.
Findings
The two-valley model reproduces NNDC in SI-GaAs.
The parameter space shows self-organized periodic and chaotic regions.
Complex structures like 'shrimp' and 'snail shell' shapes are identified.
Abstract
Semi-insulating Gallium Arsenide (SI-GaAs) samples experimentally show, under high electric fields and even at room temperature, negative differential conductivity in N-shaped form (NNDC). Since the most consolidated model for n-GaAs, namely, "the model", proposed by E. Scholl was not capable to generate the NNDC curve for SI-GaAs, in this work we proposed an alternative model. The model proposed, "the two-valley model" is based on the minimal set of generation recombination equations for two valleys inside of the conduction band, and an equation for the drift velocity as a function of the applied electric field, that covers the physical properties of the nonlinear electrical conduction of the SI-GaAs system. The "two valley model" was capable to generate theoretically the NNDC region for the first time, and with that, we were able to build a high resolution parameter-space of the…
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