Intra- and Interband Electron Scattering in the Complex Hybrid Topological Insulator Bismuth Bilayer on Bi$_2$Se$_3$
A. Eich, M. Michiardi, G. Bihlmayer, X.-G. Zhu, J.-L. Mi, Bo B., Iversen, R. Wiesendanger, Ph. Hofmann, A. A. Khajetoorians, and J. Wiebe

TL;DR
This study uses low-temperature spectroscopy and simulations to analyze electron scattering in a bismuth bilayer on Bi2Se3, revealing complex inter- and intraband processes, electron transfer effects, and the positioning of topological states.
Contribution
It provides a detailed experimental and theoretical analysis of electron scattering and band structure in a hybrid topological insulator system, highlighting electron transfer and spin-splitting phenomena.
Findings
Intraband scattering occurs in the bilayer valence band and Bi2Se3 conduction band.
Interband scattering involves the topological state and bilayer valence band.
The bilayer band gap is shifted above the Fermi level due to electron transfer.
Abstract
The band structure, intra- and interband scattering processes of the electrons at the surface of a bismuth-bilayer on BiSe have been experimentally investigated by low-temperature Fourier-transform scanning tunneling spectroscopy. The observed complex quasiparticle interference patterns are compared to a simulation based on the spin-dependent joint density of states approach using the surface-localized spectral function calculated from first principles as the only input. Thereby, the origin of the quasiparticle interferences can be traced back to intraband scattering in the bismuth bilayer valence band and BiSe conduction band, and to interband scattering between the two-dimensional topological state and the bismuth-bilayer valence band. The investigation reveals that the bilayer band gap, which is predicted to host one-dimensional topological states at the edges of the…
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