Origin of traps and charge transport mechanism in hafnia
D. R. Islamov (1, 2), V. A. Gritsenko (1, 2), C. H. Cheng (3),, A. Chin (4) ((1) Rzhanov Institute of Semiconductor Physics SB RAS, (2), Novosibirsk State University, (3) National Taiwan Normal University, (4), National Chiao Tung University)
TL;DR
This paper investigates the charge transport in hafnia (HfO₂), demonstrating that oxygen vacancies act as traps and modeling the transport mechanism with phonon-assisted tunneling, supported by experimental and theoretical data.
Contribution
It provides a combined experimental and theoretical analysis identifying oxygen vacancies as charge traps and models the transport mechanism in HfO₂.
Findings
Oxygen vacancies are responsible for charge trapping in HfO₂.
Phonon-assisted tunneling model fits experimental data well.
Thermal trap energy in HfO₂ is 1.25 eV.
Abstract
In this study, we demonstrated experimentally and theoretically that oxygen vacancies are responsible for the charge transport in HfO. Basing on the model of phonon-assisted tunneling between traps, and assuming that the electron traps are oxygen vacancies, good quantitative agreement between the experimental and theoretical data of current-voltage characteristics were achieved. The thermal trap energy of 1.25 eV in HfO was determined based on the charge transport experiments.
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