Klein-tunneling transistor with ballistic graphene

TL;DR

This paper proposes a graphene-based Klein tunneling transistor utilizing geometrical optics of Dirac Fermions, demonstrating tunable transmission suppression through total internal reflection in a prismatic active region.

Contribution

It introduces a novel Klein tunneling transistor design with a prismatic active region, exploiting total internal reflection for tunable control of electron transmission.

Findings

Transmission can be effectively tuned by geometry and bias.

The device demonstrates potential for ballistic graphene transistor applications.

Theoretical and simulation results confirm the feasibility of the design.

Abstract

Today the availability of high mobility graphene up to room temperature makes ballistic transport in nanodevices achievable. In particular, p-n-p transistor in the ballistic regime gives access to the Klein tunneling physics and allows the realization of devices exploiting the optics-like behavior of Dirac Fermions (DF) as in the Vesalego lens or the Fabry P\'erot cavity. Here we propose a Klein tunneling transistor based on geometrical optics of DF. We consider the case of a prismatic active region delimited by a triangular gate, where total internal reflection may occur, which leads to the tunable suppression of the transistor transmission. We calculate the transmission and the current by means of scattering theory and the finite bias properties using Non Equilibrium Green's Function(NEGF) simulation.