Ab-Initio computations of electronic and transport properties of wurtzite aluminum nitride
Ifeanyi H. Nwigboji, John I. Ejembi, Yuriy Malozvosky, Bethuel, Khamala, Lashounda Franklin, Guanglin Zhao, Chinedu Ekuma, and Diola Bagayoko

TL;DR
This paper presents ab-initio calculations of electronic and transport properties of wurtzite aluminum nitride using a refined DFT method, achieving results that closely match experimental data.
Contribution
The study applies the BZW-EF method within DFT to accurately determine the ground state properties of wurtzite AlN, improving the reliability of electronic structure predictions.
Findings
Calculated direct band gap of 6.28 eV matches experimental value
Provided detailed band structure, densities of states, and effective masses
Validated the BZW-EF method for accurate electronic property calculations
Abstract
We report findings from several ab-initio, self-consistent calculations of electronic and transport properties of wurtzite aluminum nitride. Our calculations utilized a local density approximation (LDA) potential and the linear combination of Gaussian orbitals (LCGO). Unlike some other density functional theory (DFT) calculations, we employed the Bagayoko, Zhao, and Williams' method, enhanced by Ekuma and Franklin (BZW-EF). The BZW-EF method verifiably leads to the minima of the occupied energies; these minima, the low laying unoccupied energies, and related wave functions provide the most variationally and physically valid density functional theory (DFT) description of the ground states of materials under study. With multiple oxidation states of Al (Al to Al) and the availability of N to N, the BZW-EF method required several sets of self-consistent calculations with…
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Taxonomy
TopicsGaN-based semiconductor devices and materials · Metal and Thin Film Mechanics · Semiconductor materials and devices
