A Chemical Route to Graphene for Electronics and Spintronics Device Applications

TL;DR

This paper reviews chemical strategies for precise patterning and functionalization of graphene, aiming to enable scalable production of graphene-based electronic and spintronic devices with atomic accuracy.

Contribution

It provides a comprehensive understanding of graphene chemistry at the atomic level, focusing on covalent modifications and their effects on electronic and magnetic properties.

Findings

Insights into graphene reactivity at the Dirac point

Effects of covalent chemistry on electronic structure

Guidelines for scalable graphene device fabrication

Abstract

The development of selective high precision chemical functionalization strategies for device fabrication, in conjunction with associated techniques for patterning graphene wafers with atomic accuracy would provide the necessary basis for a post-CMOS manufacturing technology. This requires a thorough understanding of the principles governing the reactivity and patterning of graphene at the sub-nanometer length scale. This article reviews our quest to delineate the principles of graphene chemistry - that is, the chemistry at the Dirac point and beyond, and the effect of covalent chemistry on the electronic structure, electrical transport and magnetic properties of this low-dimensional material in order to enable the scalable production of graphene-based devices for low- and high-end technology applications.