Influence of Stoichiometry on the Optical and Electrical Properties of Chemical Vapor Deposition Derived MoS$_{2}$
In Soo Kim, Vinod K. Sangwan, Deep Jariwala, Joshua D. Wood, Spencer, Park, Kan-Sheng Chen, Fengyuan Shi, Francisco Ruiz-Zepeda, Arturo Ponce,, Miguel Jose-Yacaman, Vinayak P. Dravid, Tobin J. Marks, Mark C. Hersam, and, Lincoln J. Lauhon

TL;DR
This study systematically investigates how varying stoichiometry during CVD growth of monolayer MoS2 affects its optical and electrical properties, revealing tunable characteristics for electronic and optoelectronic applications.
Contribution
It provides a controlled method to modify MoS2 properties through stoichiometry engineering during CVD synthesis, which was previously underexplored.
Findings
Mobility increases with reduced sulfur content.
Photoluminescence becomes non-uniform with stoichiometry changes.
Devices with low sulfur content show negligible hysteresis and near-zero threshold voltage.
Abstract
Ultrathin transition metal dichalcogenides (TMDCs) of Mo and W show great potential for digital electronics and optoelectronic applications. Whereas early studies were limited to mechanically exfoliated flakes, the large-area synthesis of 2D TMDCs has now been realized by chemical vapor deposition (CVD) based on a sulfurization reaction. Since then, the optoelectronic properties of CVD grown monolayer MoS have been heavily investigated, but the influence of stoichiometry on the electrical and optical properties has been largely overlooked. Here we systematically vary the stoichiometry of monolayer MoS during CVD via controlled sulfurization and investigate the associated changes in photoluminescence and electrical properties. X-ray photoelectron spectroscopy is employed to measure relative variations in stoichiometry and the persistence of MoO species. As…
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