In situ characterisation of nanoscale electromechanical properties of quasi-two-dimensional MoS2 and MoO3

TL;DR

This study demonstrates how localized mechanical strain can alter the electrical properties of quasi-2D MoS2 and MoO3, providing insights into strain engineering for electronic applications.

Contribution

It introduces an in situ electrical nanoindentation method to experimentally induce and study electrical transitions in quasi-2D TMDs and oxides.

Findings

Localized strain changes electrical conduction in MoS2 and MoO3.

Mechanical manipulation can tune electronic transport properties.

Strain engineering offers a precise control tool for 2D material electronics.

Abstract

Precise manipulation of electronic band structures of two-dimensional (2D) transition metal dichalcogenides and oxides (TMD&Os) via localised strain engineering is an exciting avenue for exploiting their unique characteristics for electronics, optoelectronics, and nanoelectromechanical systems (NEMS) applications. This work experimentally demonstrates that mechanically-induced electrical transitions can be engineered in quasi-2D molybdenum disulphide (MoS2) and molybdenum trioxide (MoO3) using an in situ electrical nanoindentation technique. It is shown that localised strains on such quasi-2D layers can induce carrier transport alterations, thereby changing their electrical conduction behaviour. Such strain effects offer a potential tool for precisely manipulating the electronic transport properties of 2D TMD&Os, and understanding the interactions of the atomic electronic states in such layered materials.