Magnetisms in $p$-type monolayer gallium chalcogenides (GaSe, GaS)

TL;DR

This study uses density-functional calculations to explore how hole doping and vacancies induce and control ferromagnetism in monolayer gallium chalcogenides, revealing long-range magnetic coupling and defect-dependent magnetization.

Contribution

It demonstrates that hole doping and intrinsic defects can induce and tune ferromagnetism in monolayer GaSe and GaS, highlighting the role of vacancies and doping in magnetic properties.

Findings

Hole doping induces ferromagnetism in monolayer GaSe and GaS.

Ga vacancies promote local magnetic moments, Se vacancies do not.

Magnetic coupling between vacancies is long-range and ferromagnetic.

Abstract

Magnetisms in $p$-type monolayer GaX (X=S,Se) is investigated by performing density-functional calculations. Due to the large density of states near the valence band edge, these monolayer semiconductors are ferromagnetic within a small range of hole doping. The intrinsic Ga vacancies can promote local magnetic moment while Se vacancies cannot. Magnetic coupling between vacancy-induced local moments is ferromagnetic and surprisingly long-range. The results indicate that magnetization can be induced by hole doping and can be tuned by controlled defect generation.