Picosecond UV Single Photon Detectors with Lateral Drift Field: Concept and Technologies

TL;DR

This paper proposes a novel concept for picosecond UV single photon detectors using lateral drift fields in III-V semiconductors, aiming for high timing resolution in photon counting applications.

Contribution

It introduces a new detector design with lateral drift fields in III-V materials and compares it to silicon-based technology for ultrafast photon detection.

Findings

Potential for 10 ps photon timing resolution

Compatibility with blue and ultraviolet spectral regions

Advances in III-V processing enable these detectors

Abstract

Group III-V semiconductor materials are being considered as a Si replacement for advanced logic devices for quite some time. Advances in III-V processing technologies, such as interface and surface passivation, large area deep submicron lithography with high-aspect ratio etching primarily driven by the MOSFET development can also be used for other applications. In this paper we will focus on photodetectors with the drift field parallel to the surface. We compare the proposed concept to the state-of-the-art Si-based technology and discuss requirements which need to be satisfied for such detectors to be used in a single photon counting mode in blue and ultraviolet spectral region with about 10 ps photon timing resolution essential for numerous applications ranging from high-energy physics to medical imaging.