Generation and Detection of Spin Currents in Semiconductor Nanostructures with Strong Spin-Orbit Interaction

TL;DR

This paper demonstrates the electrical generation and measurement of pure spin currents in semiconductor nanostructures with strong spin-orbit interaction, advancing spintronics technology.

Contribution

It introduces a method for purely electrical spin current generation and a spin-to-charge conversion technique for measurement in semiconductor nanostructures.

Findings

Measured spin currents of 174 pA

Achieved a spin Hall angle of 34%

Quantified the mesoscopic spin Hall effect

Abstract

Storing, transmitting, and manipulating information using the electron spin resides at the heart of spintronics. Fundamental for future spintronics applications is the ability to control spin currents in solid state systems. Among the different platforms proposed so far, semiconductors with strong spin-orbit interaction are especially attractive as they promise fast and scalable spin control with all-electrical protocols. Here we demonstrate both the generation and measurement of pure spin currents in semiconductor nanostructures. Generation is purely electrical and mediated by the spin dynamics in materials with a strong spin-orbit field. Measurement is accomplished using a spin-to-charge conversion technique, based on the magnetic field symmetry of easily measurable electrical quantities. Calibrating the spin-to-charge conversion via the conductance of a quantum point contact, we quantitatively measure the mesoscopic spin Hall effect in a multiterminal GaAs dot. We report spin currents of 174 pA, corresponding to a spin Hall angle of 34%.