Fast non-thermal switching between macroscopic charge-ordered quantum states induced by charge injection

TL;DR

This paper demonstrates ultrafast, non-thermal switching between metastable macroscopic quantum states in a material, enabling potential applications in high-speed, non-volatile quantum memory devices.

Contribution

First demonstration of sub-50 ps non-thermal switching between metastable quantum states using charge injection, highlighting stability and sharp thresholds for electronic applications.

Findings

Achieved sub-50 ps switching speed.

Observed large resistance changes during switching.

Demonstrated high fidelity in bi-stability control.

Abstract

The functionality of logic and memory elements in current electronics is based on multi-stability, driven either by manipulating local concentrations of electrons in transistors, or by switching between equivalent states of a material with a degener- ate ground state in magnetic or ferroelectric materials. Another possibility is offered by phase transitions with switching between metallic and insulating phases, but classical phase transitions are limited in speed by slow nucleation, proliferation of domains and hysteresis. We can in principle avoid these problems by using quantum states for switching, but microscopic systems suffer from decoherence which prohibits their use in everyday devices. Macroscopic quantum states, such as the superconducting ground state have the advantage that on a fundamental level they do not suffer from decoherence plaguing microscopic systems. Here we demonstrate for the first time ultrafast non-thermal switching between different metastable electronically ordered states by pulsed electrical charge injection. The macroscopic nature of the many-body quantum states(1-4) - which are not part of the equilibrium phase diagram - gives rise to unprecedented stability and remarka- bly sharp switching thresholds. Fast sub-50 ps switching, large associated re- sistance changes, 2-terminal operation and demonstrable high fidelity of bi-stability control suggest new opportunities for the use of macroscopic quantum states in electronics, particularly for an ultrafast non-volatile quantum charge-order resistive random access memory (QCOR-RAM).