Observation of topological surface state quantum Hall effect in an intrinsic three-dimensional topological insulator
Yang Xu, Ireneusz Miotkowski, Chang Liu, Jifa Tian, Hyoungdo Nam,, Nasser Alidoust, Jiuning Hu, Chih-Kang Shih, M. Zahid Hasan, Yong P. Chen

TL;DR
This paper reports the experimental observation of the quantum Hall effect arising from topological surface states in an intrinsic 3D topological insulator, demonstrating quantized conductance and potential for advanced quantum applications.
Contribution
First observation of topological surface state quantum Hall effect in an intrinsic 3D topological insulator with well-developed quantized Hall plateaus.
Findings
Surface dominated conduction near room temperature
Observation of integer and half-integer quantum Hall plateaus
Gating reveals half-integer quantum Hall effect of degenerate Dirac gases
Abstract
A three-dimensional (3D) topological insulator (TI) is a quantum state of matter with a gapped insulating bulk yet a conducting surface hosting topologically-protected gapless surface states. One of the most distinct electronic transport signatures predicted for such topological surface states (TSS) is a well-defined half-integer quantum Hall effect (QHE) in a magnetic field, where the surface Hall conductivities become quantized in units of (1/2)e2/h (e being the electron charge, h the Planck constant) concomitant with vanishing resistance. Here, we observe well-developed QHE arising from TSS in an intrinsic TI of BiSbTeSe2. Our samples exhibit surface dominated conduction even close to room temperature, while the bulk conduction is negligible. At low temperatures and high magnetic fields perpendicular to the top and bottom surfaces, we observe well-developed integer quantized Hall…
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Taxonomy
TopicsTopological Materials and Phenomena · Graphene research and applications · Diamond and Carbon-based Materials Research
