Reversal-mechanism of in-plane current induced perpendicular switching in a single ferromagnetic layer

TL;DR

This paper introduces a new model explaining perpendicular magnetization switching in a single ferromagnetic layer via current-induced domain wall motion, challenging previous Rashba or spin Hall effect explanations.

Contribution

The proposed reversal mechanism based on chirality-dependent domain wall motion offers a novel understanding of current-induced switching in ferromagnetic layers.

Findings

Switching occurs between multidomain states.

The model explains various switching behaviors.

Implications for spin Hall angle estimation.

Abstract

We propose a magnetization reversal model to explain the perpendicular switching of a single ferromagnetic layer induced by an in-plane current. Contrary to previously proposed reversal mechanisms that such magnetic switching is directly from the Rashba or spin Hall effects, we suggest that this type of switching arises from the current-induced chirality dependent domain wall motion. By measuring the field dependent switching behaviors, we show that such switching can also be achieved between any two multidomain states, and all of these switching behaviors can be well explained by this model. This model indicates that the spin Hall angle in such structures may be overestimated and also predicts similar switching behaviors in other ferromagnetic structures with chiral domain walls or skyrmions.