Enhanced Eshelby Twist on Thin Wurtzite InP Nanowires and Measurement of Local Crystal Rotation

TL;DR

This study investigates the enhanced crystal twist in thin InP wurtzite nanowires caused by screw dislocations, revealing larger-than-expected rotations and strain-induced potential wells, advancing understanding of nanoscale lattice distortions.

Contribution

It provides the first detailed measurement of local crystal rotation and twist enhancement in thin InP nanowires with screw dislocations, challenging existing elasticity theory predictions.

Findings

Nanowires with 10-nm radius exhibit up to 100% larger twist than predicted.

Strain distribution shows a Mexican-hat-like geometry, potentially forming carrier potential wells.

Measured dislocation Burgers vectors and twist rates confirm enhanced Eshelby twist effects.

Abstract

We have performed a detailed study of the lattice distortions of InP wurtzite nanowires containing an axial screw dislocation. Eshelby predicted that this kind of system should show a crystal rotation due to the dislocation induced torque. We have measured the twisting rate and the dislocation Burgers vector on individual wires, revealing that nanowires with a 10-nm radius have a twist up to 100% larger than estimated from elasticity theory. The strain induced by the deformation has a Mexican-hat-like geometry, which may create a tube-like potential well for carriers.