Electronic reconstruction at the interface between band insulating oxides: the LaAlO3/SrTiO3 system

TL;DR

This paper reviews the formation and properties of a quasi-two-dimensional electron system at LaAlO3/SrTiO3 interfaces, highlighting recent discoveries and their implications for future electronic applications.

Contribution

It provides a comprehensive overview of the mechanisms and electronic properties of the q2DES at LAO/STO interfaces, summarizing key research findings from the past decade.

Findings

Discovery of conducting interfaces between insulating oxides

Insights into the mechanism of q2DES formation

Potential applications in electronics and spintronics

Abstract

The conducting quasi-two dimensional electron system (q2DES) formed at the interface between LaAlO3 and SrTiO3 band insulators is confronting the condensed matter physics community with new paradigms. While the mechanism for the formation of the q2DES is debated, new conducting interfaces have been discovered paving the way to possible applications in electronics, spintronics and optoelectronics. This chapter is an overview of the research on the LAO/STO sys-tem, presenting some of the most important results obtained in the last decade to clarify the mechanism of formation of the q2DES at the oxide interfaces and its peculiar electronic properties as compared to semiconducting 2D-electron gas.