Revisit the spin-FET: Multiple reflections, inelastic scattering, and lateral size effects

TL;DR

This paper reevaluates the spin-FET by using lattice Green's function simulations to incorporate inelastic scattering and lateral effects, revealing differences from traditional models and providing generalized insights.

Contribution

It introduces an improved analytical model for the spin-FET that accounts for multiple reflections, inelastic scattering, and lateral size effects, extending beyond the Datta-Das model.

Findings

Differences from the Datta-Das model in the coherent regime

Impact of inelastic scattering on spin control

Effects of lateral confinement on device performance

Abstract

We revisit the spin-injected field effect transistor (spin-FET) by simulating a lattice model based on recursive lattice Green's function approach. In the one-dimensional case and coherent regime, the simulated results reveal noticeable differences from the celebrated Datta-Das model, which motivate thus an improved treatment and lead to analytic and generalized result. The simulation also allows us to address inelastic scattering (using B\"uttiker's fictitious reservoir approach) and lateral confinement effects on the control of spins which are important issues in the spin-FET device.