Magnetization in AIIIBV semiconductor heterostructures with the depletion layer of manganese

TL;DR

This study investigates the magnetic properties of GaAs/GaInAs/GaAs heterostructures with manganese layers, revealing low-dimensional ferromagnetism and estimating the manganese concentration threshold for ferromagnetic ordering.

Contribution

It provides experimental insights into the magnetization behavior and ferromagnetic threshold in manganese-doped semiconductor heterostructures with atomically controlled Mn layers.

Findings

Magnetization increases with magnetic field, indicating low-dimensional ferromagnetism.

Ferromagnetic ordering occurs above a specific manganese concentration threshold.

Magnetic properties are studied over a temperature range of 1.8-300K.

Abstract

The magnetic moment and magnetization in GaAs/Ga$_{0.84}$In$_{0.16}$As/GaAs heterostructures with Mn deluted in GaAs cover layers and with atomically controlled Mn $\delta$-layer thicknesses near GaInAs-quantum well ($\sim$3 nm) in temperature range T=(1.8-300)K in magnetic field up to 50 kOe have been investigated. The mass magnetization all of the samples of GaAs/Ga$_{0.84}$In$_{0.16}$As/GaAs with Mn increases with the increasing of the magnetic field that pointed out on the presence of low-dimensional ferromagnetism in the manganese depletion layer of GaAs based structures. It has been estimated the manganese content threshold at which the ferromagnetic ordering was found.