Accessing defect dynamics using intense, nanosecond pulsed ion beams
A. Persaud, J.J. Barnard, H. Guo, P. Hosemann, S. Lidia, and A. M. Minor, P.A. Seidl, T. Schenkel

TL;DR
This paper presents preliminary experimental results using intense, nanosecond pulsed ion beams at NDCX-II to study defect dynamics in materials, enabling in-situ analysis crucial for understanding radiation effects.
Contribution
It introduces the use of the NDCX-II accelerator for in-situ defect dynamics studies via pump-probe experiments with pulsed ion beams, combining experimental data and simulations.
Findings
Preliminary channeling data for lithium and potassium ions in silicon.
Comparison of experimental data with Crystal Trim simulations.
Discussion of accelerator improvements and new diagnostics tools.
Abstract
Gaining in-situ access to relaxation dynamics of radiation induced defects will lead to a better understanding of materials and is important for the verification of theoretical models and simulations. We show preliminary results from experiments at the new Neutralized Drift Compression Experiment (NDCX-II) at Lawrence Berkeley National Laboratory that will enable in-situ access to defect dynamics through pump-probe experiments. Here, the unique capabilities of the NDCX-II accelerator to generate intense, nanosecond pulsed ion beams are utilized. Preliminary data of channeling experiments using lithium and potassium ions and silicon membranes are shown. We compare these data to simulation results using Crystal Trim. Furthermore, we discuss the improvements to the accelerator to higher performance levels and the new diagnostics tools that are being incorporated.
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Taxonomy
TopicsIon-surface interactions and analysis · Integrated Circuits and Semiconductor Failure Analysis · Pulsed Power Technology Applications
