Quantum friction
A.I. Volokitin, B.N.J. Persson
TL;DR
This paper studies quantum van der Waals friction between graphene and SiO2, explaining current saturation at high fields and predicting measurable frictional drag between graphene sheets, with implications for nanoscale friction and electronic transport.
Contribution
It provides a theoretical analysis of quantum friction effects in graphene-substrate systems and predicts measurable drag voltages induced by van der Waals friction.
Findings
Electric current saturation at high electric fields due to quantum friction.
Weak temperature dependence of saturation current.
Predicted measurable frictional drag voltage between graphene sheets.
Abstract
We investigate the van der Waals friction between graphene and an amorphous SiO substrate. We find that due to this friction the electric current is saturated at a high electric field, in agreement with experiment. The saturation current depends weakly on the temperature, which we attribute to the quantum friction between the graphene carriers and the substrate optical phonons. We calculate also the frictional drag between two graphene sheets caused by van der Waals friction, and find that this drag can induce a voltage high enough to be easily measured experimentally.
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Taxonomy
TopicsMechanical and Optical Resonators · Advanced Thermodynamics and Statistical Mechanics · Quantum Electrodynamics and Casimir Effect