Efficient Control of the Rashba Effective Magnetic Field Using Acceptor Doped Quantum Wells

TL;DR

This paper proposes acceptor doping in quantum wells to significantly enhance the Rashba effective magnetic field's sensitivity to external electric fields, enabling more efficient control in spintronic devices.

Contribution

It introduces a novel doping scheme with acceptors at the well center and donors in barriers to amplify Rashba field sensitivity to electric fields.

Findings

Sensitivity of Rashba field increased by two orders of magnitude.

Strong internal electric fields facilitate easier modulation by external fields.

Numerical simulations confirm enhanced control over Rashba effect.

Abstract

To induce a strong Rashba effective magnetic field and enhance its sensitivity to an external electric field, we propose acceptor doping in quantum wells. The acceptors are doped at the center of the well, and donors are doped in the barrier layers to compensate the acceptors and induce conduction electrons. In strongly doped wells, the electric field on these conduction electrons is easily changed by a weak external electric field, by virtue of the strong internal electric field between the acceptors and donors and the resulting high triangle potential barrier induced in the well. As a result, the Rashba effective magnetic field, proportional to the electric field on the electrons, is quite sensitive to the external electric field. Numerical calculations demonstrate that the sensitivity of the Rashba field is larger by two orders of magnitude than that in undoped wells.