3D full-band, Atomistic Quantum transport in n-Si Junction less Nanowire field-effect transistors

TL;DR

This paper presents a comprehensive quantum transport analysis of n-Si junctionless nanowire FETs using 3D atomistic full-band simulations with NEGF, exploring device characteristics and material effects.

Contribution

It introduces a detailed 3D atomistic simulation framework for junctionless nanowire FETs, incorporating full-band quantum transport and material variations.

Findings

Accurate modeling of IDS VGS and VDS characteristics.

Insights into ON/OFF current and subthreshold swing.

Effect of high-K gate materials on device performance.

Abstract

In the present work, we have investigated the quantum transport in n Si junction less nanowire field effect transistors using 3 D, full band atomistic sp3d5s spin orbital coupled tight binding method. We have investigated the IDS VGS transfer characteristics, IDS VDS output characteristics, ON current, OFF current leakage, subthreshold swing and energy position resolved electron density spectrum Gn x, E in n Si junction less nanowire field effect transistors. We also study IDS VGS transfer characteristics with variation of High K gate materials. Quantum mechanical simulation is performed on the basis of Non Equilibrium Green Function formalism to solve coupled Poisson Schr "odinger equation self consistently for potentials and local density of state in n Si junction less nanowire field effect transistors.