Near field thermal memory device

TL;DR

This paper introduces a near-field thermal memory device utilizing radiative bistability in a system of SiO₂ and VO₂ plates, achieving rapid switching due to near-field photon tunneling, with potential for fast thermal memory applications.

Contribution

The paper presents the concept and demonstration of a near-field thermal memory device based on radiative bistability in a SiO₂-VO₂ system, with significantly reduced switching time.

Findings

Switching time of 5 ms due to near-field effects

VO₂ exhibits two thermodynamical steady-states

Fast switching enabled by near-field photon tunneling

Abstract

We report the concept of a near-field memory device based on the radiative bistability effect in the system of two closely separated parallel plates of SiO$_2$ and VO$_2$ which exchange heat by thermal radiation in vacuum. We demonstrate that the VO$_2$ plate, having metal-insulator transition at 340 K, has two thermodynamical steady-states. One can switch between the states using an external laser impulse. We show that due to near-field photon tunneling between the plates, the switching time is found to be only 5 ms which is several orders lower than in case of far field.