Ballistic quantum transport in L-shaped Vertical Halo-Implanted p+-GaSb/InAs n-TFETs

TL;DR

This paper investigates ballistic quantum transport in L-shaped vertical halo-implanted p+-GaSb/InAs n-TFETs, analyzing their electrical characteristics and device optimization using advanced quantum mechanical simulation methods.

Contribution

It introduces a detailed study of ballistic quantum transport in a novel L-shaped heterostructure n-TFET using 3D atomistic simulations and explores device performance optimization.

Findings

Type III broken gap band alignment enhances tunneling.

Gate electric field and internal field assist tunneling.

Device parameters significantly affect ON/OFF currents and subthreshold swing.

Abstract

In the present work, we have investigated ballistic quantum transport in vertical halo implanted p plus minus GaSb InAs n TFETs. We have investigated the current voltage characteristics, ON current, OFF current leakage, subthreshold swing variation as function of gate length, drain length, gate undercut, equivalent oxide thickness, High K and drain thickness. The electrostatic control, I V performances and optimization of device structure are carried out for novel L shaped nonlinear geometry n TFETs. In the n TFETs device p plus minus GaSb InAs heterostructure gives rise to type III broken gap band alignment. In this geometry the gate electric field and tunnel junction internal field are oriented in same direction and assist the Band to Band tunnelling process. To study the ballistic quantum transport in this L shaped nonlinear geometry we used 3 D, full-band atomistic sp3d5s spin orbital coupled tight binding method based quantum mechanical simulator which works on the basis of Non Equilibrium Green Function formalism to solve coupled Poisson Schr "odinger equation self consistently for potentials and Local Density of state.