A Device model for xMR Sensors based on the Stoner-Wohlfarth model

TL;DR

This paper develops an analytical device model for xMR sensors based on the Stoner-Wohlfarth model, enabling efficient circuit design and validation through experimental data and micromagnetic comparisons.

Contribution

It introduces a novel device model combining the Stoner-Wohlfarth approach with magneto-resistivity, validated against measurements and micromagnetic simulations.

Findings

Model accurately predicts xMR sensor behavior

Parameters optimized via global cost function

Validated against experimental and micromagnetic data

Abstract

The Stoner-Wohlfarth model provides an efficient analytical model to describe the behavior of magnetic layers within xMR sensors. Combined with a proper description of magneto-resistivity an efficient device model can be derived, which is necessary for an optimal electric circuit design. Parameters of the model are determined by global optimization of an application specific cost function which contains measured resistances for different applied fields. Several application cases are examined and used for validation of the device model. Furthermore the applicability of the SW model is verified by comparison with micromagnetic energy minimization results.