Strain-gradient-induced switching of nanoscale domains in free-standing ultrathin films
G. D. Belletti, S. D. Dalosto, Silvia Tinte

TL;DR
This study uses atomistic simulations to show how local strain gradients can switch nanoscale ferroelectric domains in ultrathin PbTiO₃ films, revealing thickness-dependent switching mechanisms and the role of flexoelectricity.
Contribution
It demonstrates the first detailed atomistic insight into strain-gradient-induced domain switching in free-standing ultrathin ferroelectric films, highlighting thickness-dependent behaviors.
Findings
Strain gradients can switch polarization in nanoscale domains.
Thinner films show domain wall migration during switching.
Thicker films exhibit progressive switching without domain-wall motion.
Abstract
We report first-principle atomistic simulations on the effect of local strain gradients on the nanoscale domain morphology of free-standing PbTiO ultrathin films. First, the ferroelectric properties of free films at the atomic level are reviewed. For the explored thicknesses (10 to 23 unit cells), we find flux-closure domain structures whose morphology is thickness dependent. A critical value of 20 unit cells is observed: thinner films show structures with 90 domain loops, whereas thicker ones develop, in addition, 180 domain walls, giving rise to structures of the Landau-Lifshitz type. When a local and compressive strain gradient at the top surface is imposed, the gradient is able to switch the polarization of the downward domains, but not to the opposite ones. The evolution of the domain pattern as a function of the strain gradient strength consequently depends on…
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