Transverse Acoustic Phonon Transistor Based on Asymmetric Potential Distribution

TL;DR

This paper demonstrates a transverse acoustic phonon transistor that uses asymmetric potential distribution and external bias to generate and control TA phonons, enabling electrical manipulation of crystal symmetry.

Contribution

It introduces a novel method to electrically generate and modulate transverse acoustic phonons via asymmetric potential distribution and external bias.

Findings

Successful experimental demonstration of a TA phonon transistor.

External bias controls amplitude and on-state duration of TA phonons.

Frequency shift and geometrical dependence confirm symmetry manipulation.

Abstract

We experimentally demonstrate a transverse acoustic (TA) phonon transistor. Phonons are coherently initiated by femtosecond photocarrier screening on potential gradients. Although translational symmetry within the isotropic plane normally prohibits optical generation of TA phonons, we show that the combined application of an external bias in the vertical and lateral directions can break the selection rules, generating the forbidden TA mode. The amplitude and on-state time of the TA mode can be modulated by the external field strength and size of the laterally biased region. The observed frequency shift with an external bias as well as the strong geometrical dependence confirm the role of the asymmetric potential distribution in electrically manipulating the crystal symmetry to control and activate the transistor.