Quantum interference effects on the noise power in the CNT/aGNR/CNT junction

TL;DR

This paper investigates how quantum interference influences noise power and Fano factor in a CNT/aGNR/CNT junction, revealing that contact positions and magnetic fields significantly affect electronic noise characteristics.

Contribution

It introduces a detailed numerical analysis of quantum interference effects on noise in CNT/aGNR/CNT systems, considering contact positions and magnetic fields as key variables.

Findings

Quantum interference causes Fano-resonance and anti-resonance peaks in transmission.

Noise power and Fano factor depend on contact positions and magnetic field strength.

Shot noise can be tuned between Poisson and sub-Poisson regimes.

Abstract

Based on tight-binding model and a generalized Green's function method in Landauer-B\"uttiker formalism, the effects of quantum interference (QI) on the noise power and Fano factor of an armchair graphene nanoribbon (aGNR) sandwiched between infinite single wall carbon nanotube (SWCNT) as a CNT/aGNR/CNT system are numerically investigated. In this work, changing the aGNR to CNT electrodes contact positions and applying the magnetic field as two sources of QI are considered. We have found different Fano-resonance and anti-resonance peaks on the transmission probability in the presence of QI sources that show profound effects on the current-voltage characteristics and noise power. Our results also show that the shot noise characteristic, either in the Poisson limit ($F=1$) or sub-Poisson limit ($F<1$), and also maximum value of the Fano factor strongly depend on the aGNR to CNT electrodes contact positions and the magnetic field strength. These results can be useful for designing the future nano-electronic devices.