Magnetoresistive property study of direct and indirect band gap thermoelectric Bi-Sb alloys

TL;DR

This study investigates the magnetoresistive properties of Bi-Sb alloys with direct and indirect band gaps, revealing large positive MR and high carrier mobility, explained by classical models, advancing understanding of their electronic behavior.

Contribution

It provides new insights into the magnetoresistance behavior of Bi-Sb alloys, especially the nearly linear high-field MR explained by classical models.

Findings

Large positive MR approaching 400% observed.

High carrier mobility extracted from low field MR data.

High field MR explained by classical Parish-Littlewood model.

Abstract

We report magnetoresistive properties of direct and indirect band gap Bismuth-Antimony (Bi-Sb) alloys. Band gap increases with magnetic field. Large positive magnetoresistance (MR) approaching to 400 % is observed. Low field MR experiences quadratic growth and at high field it follows a nearly linear behavior without sign of saturation. Carrier mobility extracted from low field MR data, depicts remarkable high value. Correlation between MR and mobility is revealed. We demonstrate that the strong nearly linear MR at high field can be well understood by classical method, co-build by Parish and Littlewood.