p+-Al0.3Ga0.7Sb Pocket-Implanted L-shaped GaSb/InAs Heterojunction Vertical n-TFETs

TL;DR

This study explores the performance of a novel L-shaped GaSb/InAs heterojunction n-channel TFET with a 4 nm channel, using advanced quantum simulation to optimize key electrical characteristics for low-voltage applications.

Contribution

It introduces a detailed quantum mechanical analysis of a new L-shaped heterojunction TFET design with specific geometric and material parameters, advancing the understanding of its electrical performance.

Findings

Optimized device parameters improve subthreshold swing.

Enhanced ON/OFF current ratio achieved.

Device shows potential for low-voltage operation.

Abstract

In the present work, we have investigated the performances of p plus minus Al0.3Ga0.7Sb Pocket Implanted L shaped GaSb InAs staggered bandgap SG heterojunction vertical n channel tunnel field effect transistors TFETs of 4 nm thin channel structures with the gate lengths of 20 nm. In this L shaped nonlinear geometry the gate electric field and tunnel junction internal field are oriented in same direction. We have used a 3 D full band atomistic sp3d5s spin orbital coupled tight binding method based quantum mechanical simulator. We have investigated current voltage characteristics, ON current, OFF current and subthreshold swing as functions of equivalent oxide thickness Tox, gate length LG, drain length LD, gate undercut LUC, dielectric constant and drain thickness TInAs in nonlinear L shaped TFETs for low subthreshold swing and low voltage operation.