Two-Dimensional TaSe2 Metallic Crystals: Spin-Orbit Scattering Length and Breakdown Current Density

TL;DR

This study measures the spin-orbit scattering length and breakdown current density of 2H-TaSe2, revealing its potential for spintronic devices due to strong spin-orbit coupling and high current tolerance.

Contribution

The paper provides the first detailed characterization of spin-orbit scattering length and breakdown current density in 2H-TaSe2, highlighting its suitability for spin Hall effect and spin-torque applications.

Findings

Spin-orbit scattering length of 17 nm in few-layer TaSe2.

Breakdown current density reaches 3.7×10^7 A/cm^2.

Comparable spin-orbit properties to platinum.

Abstract

We have determined the spin-orbit scattering length of two-dimensional layered 2H-TaSe2 metallic crystals by detailed characterization of the weak anti-localization phenomena in this strong spin-orbit interaction material. By fitting the observed magneto-conductivity, the spin-orbit scattering length for 2H-TaSe2 is determined to be 17 nm in the few-layer films. This small spin-orbit scattering length is comparable to that of Pt, which is widely used to study the spin Hall effect, and indicates the potential of TaSe2 for use in spin Hall effect devices. In addition to strong spin-orbit coupling, a material must also support large charge currents to achieve spin-transfer-torque via the spin Hall effect. Therefore, we have characterized the room temperature breakdown current density of TaSe2 in air, where the best breakdown current density reaches 3.7$\times$10$^7$ A/cm$^2$. This large breakdown current further indicates the potential of TaSe2 for use in spin-torque devices and two-dimensional device interconnect applications.