Effects of impurity on tunnel magnetoresistance in a ferromagnetic electrode/carbon nanotube/ferromagnetic electrode junctio

TL;DR

This study investigates how impurities like nitrogen and boron affect spin-dependent transport and tunnel magnetoresistance in a carbon nanotube-based spin-valve, providing insights for future spintronic device design.

Contribution

It introduces a numerical analysis of impurity effects on spin transport in a ferromagnetic electrode/carbon nanotube/ferromagnetic electrode junction using Green's function and Landauer-Buttiker formalism.

Findings

Impurities significantly alter spin-dependent current.

Impurities strongly influence tunnel magnetoresistance.

Results aid in designing advanced spintronic devices.

Abstract

Effects of impurity on the spin-dependent transport in a single wall carbon nanotube spin-valve, as ferromagnetic electrode/carbon nanotube/ferromagnetic electrode model junction is numerically investigated. Using a generalized Green's function method and the Landauer-Buttiker formalism, the impurity conditions are determined by randomly substitution of carbon atoms in the honeycomb carbon nanotube lattice by nitrogen and boron atoms. We have found that transport characteristics, including the spin-dependent current and tunnel magnetoresistance are strongly influenced by the impurity effects. We think that the results of the present report could be useful for designing the future spintronic devices.