Two-dimensional electron gas in monolayer InN quantum wells

TL;DR

This paper experimentally confirms the two-dimensional nature of electron systems in monolayer InN quantum wells, revealing high electron density, mobility, and potential topological properties, advancing understanding of quantum well electronic behavior.

Contribution

The study provides experimental evidence of 2D electron systems in monolayer InN quantum wells and suggests their topological characteristics, which is a novel insight in this material system.

Findings

Electron density of 5x10^{15} cm^{-2}

Mobility of 420 cm^2/Vs

Resistance shows no temperature dependence

Abstract

We report in this letter experimental results that confirm the two-dimensional nature of the electron systems in monolayer InN quantum wells embedded in GaN barriers. The electron density and mobility of the two-dimensional electron system (2DES) in these InN quantum wells are 5x10^{15} cm^{-2} and 420 cm^2/Vs, respectively. Moreover, the diagonal resistance of the 2DES shows virtually no temperature dependence in a wide temperature range, indicating the topological nature of the 2DES.