Spin-valley relaxation and quantum transport regimes in two-dimensional transition metal dichalcogenides

TL;DR

This paper investigates quantum transport and spin relaxation in doped transition metal dichalcogenides, revealing how spin relaxation varies with carrier density and detailing the crossover between different quantum transport regimes.

Contribution

It provides a theoretical framework for understanding spin relaxation and quantum transport regimes in TMDCs, highlighting the density dependence and regime crossovers.

Findings

Spin relaxation vanishes near the band edge for holes.

Density-independent spin diffusion length is observed.

Describes crossovers between orthogonal, double-unitary, and symplectic regimes.

Abstract

Quantum transport and spintronics regimes are studied in p- and n-doped atomic layers of hexagonal transition metal dichalcogenides (TMDCs), subject to the interplay between the valley structure and spin-orbit coupling. We find how spin relaxation of carriers depends on their areal density and show that it vanishes for holes near the band edge, leading to the density-independent spin diffusion length, and we develop a theory of weak localisation/antilocalisation, describing the crossovers between the orthogonal, double-unitary and symplectic regimes of quantum transport in TMDCs.