Strongly anisotropic ballistic magnetoresistance in compact three-dimensional semiconducting nanoarchitectures

TL;DR

This paper theoretically demonstrates that rolled-up semiconducting nanoarchitectures exhibit highly anisotropic ballistic magnetoresistance, with conductance strongly depending on magnetic field direction, tunable by geometry and temperature.

Contribution

It introduces a novel theoretical analysis of anisotropic magnetoresistance in curved semiconducting nanoarchitectures, highlighting geometry-dependent tunability and room-temperature effects.

Findings

Magnetoresistance anisotropy scales with inverse winding number.

Anisotropy persists up to a temperature that can reach room temperature.

External magnetic field and curvature radius enhance the effect.

Abstract

We establish theoretically that in nonmagnetic semiconducting bilayer or multilayer thin film systems rolled up into compact quasi-one-dimensional nanoarchitectures, the ballistic magnetoresistance is very anisotropic: conductances depend strongly on the direction of an externally applied magnetic field. This phenomenon originates from the curved open geometry of rolled-up nanotubes, which leads to a tunability of the number of quasi-one-dimensional magnetic subbands crossing the Fermi energy. The experimental significance of this phenomenon is illustrated by a sizable anisotropy that scales with the inverse of the winding number, and persists up to a critical temperature that can be strongly enhanced by increasing the strength of the external magnetic field or the characteristic radius of curvature, and can reach room temperature.