Magneto-transport properties of oriented Mn2CoAl films sputtered on thermally oxidized Si substrates

TL;DR

This study demonstrates the successful growth of oriented Mn2CoAl thin films on oxidized silicon substrates, revealing their semiconducting and magnetic properties relevant for spintronics applications.

Contribution

It reports the first successful sputtering growth of oriented Mn2CoAl films on Si substrates with detailed magnetotransport and magnetic property analysis.

Findings

Films are well oriented with (001) direction and smooth surface.

Transport shows semiconducting-like resistivity, small anomalous Hall effect, and linear magnetoresistance.

Magnetic properties are similar to bulk Mn2CoAl with minor composition-induced differences.

Abstract

Spin gapless semiconductors are interesting novel class of materials by embracing both magnetism and semiconducting. Its potential application in future spintronics requires realization in thin film form. In this letter, we report a successful growth of spin gapless Mn2CoAl films on thermally oxidized Si substrates by magnetron sputtering deposition. The films deposited at 673K are well oriented to (001) direction and display a uniform-crystalline surface. Magnetotransport measurements on the oriented films reveal a semiconducting-like resistivity, small anomalous Hall conductivity and linear magnetoresistance (MR) representative of the transport signatures of spin gapless semiconductors. The magnetic properties of the films have also been investigated and compared to that of bulk Mn2CoAl, with small discrepancy induced by the composition deviation.