Silicon-Chip Mid-Infrared Frequency Comb Generation
Austin G. Griffith, Ryan K. W. Lau, Jaime Cardenas, Yoshitomo, Okawachi, Aseema Mohanty, Romy Fain, Yoon Ho Daniel Lee, Mengjie Yu,, Christopher T. Phare, Carl B. Poitras, Alexander L. Gaeta, Michal Lipson

TL;DR
This paper reports the development of a silicon-chip-based broadband mid-infrared frequency comb spanning 2.1 to 3.5 micrometers, enabling compact, robust spectroscopic sensing outside laboratory settings.
Contribution
The authors overcome material and dispersion challenges in silicon microresonators to generate a broadband mid-IR frequency comb on-chip for the first time.
Findings
Broadband comb from 2.1 to 3.5 micrometers achieved
Demonstrated potential for atmospheric gas sensing
Platform is compact, robust, and suitable for real-world applications
Abstract
Optical frequency combs represent a revolutionary technology for high precision spectroscopy due to their narrow linewidths and precise frequency spacing. Generation of such combs in the mid-infrared (IR) spectral region (2-20 um) is of great interest due to the presence of a large number of gas absorption lines in this wavelength regime. Recently, frequency combs have been demonstrated in the MIR in several platforms, including fiber combs, mode-locked lasers, optical parametric oscillators, and quantum cascade lasers. However, these platforms are either relatively bulky or challenging to integrate on-chip. An alternative approach using parametric mixing in microresonators is highly promising since the platform is extremely compact and can operate with relatively low powers. However, material and dispersion engineering limitations have prevented the realization of a microresonator comb…
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