Self-consistent model of spin accumulation magnetoresistance in ferromagnet-insulator-semiconductor tunnel junctions

TL;DR

This paper presents a comprehensive self-consistent model for spin accumulation magnetoresistance in ferromagnet-insulator-semiconductor tunnel junctions, accounting for various physical parameters affecting the 3T signal.

Contribution

It introduces a rigorous, self-consistent theoretical framework to simulate spin accumulation signals considering multiple device and material factors.

Findings

Model accurately predicts the 3T signal under various conditions

Highlights importance of self-consistency in spin transport simulations

Provides insights into device optimization for spintronic applications

Abstract

Spin accumulation in a paramagnetic semiconductor due to voltage-biased current tunneling from a polarized ferromagnet is experimentally manifest as a small additional spin-dependent resistance. We describe a rigorous model incorporating the necessary self-consistency between electrochemical potential splitting, spin-dependent injection current, and applied voltage that can be used to simulate this so-called "3T" signal as a function of temperature, doping, ferromagnet bulk spin polarization, tunnel barrier features and conduction nonlinearity, and junction voltage bias.