Generation of spin-polarized currents via cross-relaxation with dynamically pumped paramagnetic impurities

TL;DR

This paper proposes a theoretical method for generating spin-polarized currents in solid-state devices using dynamically polarized NV centers in diamond, which could advance spintronics technology.

Contribution

It introduces a novel approach for spin injection via NV centers, analyzing spin cross-relaxation in a layered geometry with a trap-and-release model.

Findings

Near-unity carrier polarization achievable under certain conditions

Electron spins are more robust against spin-lattice relaxation than holes

Polarization process is weakly dependent on carrier hopping dynamics

Abstract

Key to future spintronics and spin-based information processing technologies is the generation, manipulation, and detection of spin polarization in a solid state platform. Here, we theoretically explore an alternative route to spin injection via the use of dynamically polarized nitrogen-vacancy (NV) centers in diamond. We focus on the geometry where carriers and NV centers are confined to proximate, parallel layers and use a 'trap-and-release' model to calculate the spin cross-relaxation probabilities between the charge carriers and neighboring NV centers. We identify near-unity regimes of carrier polarization depending on the NV spin state, applied magnetic field, and carrier g-factor. In particular, we find that unlike holes, electron spins are distinctively robust against spin-lattice relaxation by other, unpolarized paramagnetic centers. Further, the polarization process is only weakly dependent on the carrier hopping dynamics, which makes this approach potentially applicable over a broad range of temperatures.