Charge tuning in [111] grown GaAs droplet quantum dots
L. Bouet, M. Vidal, T. Mano, N. Ha, T. Kuroda, M. V. Durnev, M. M., Glazov, E. L. Ivchenko, X. Marie, T. Amand, K. Sakoda, G. Wang, and B., Urbaszek

TL;DR
This paper demonstrates charge tuning in strain-free GaAs/AlGaAs quantum dots grown by droplet epitaxy, revealing excited states and magnetic properties through micro-photoluminescence at cryogenic temperatures.
Contribution
It introduces controlled charge tuning in droplet-grown GaAs quantum dots and uncovers excited valence and conduction states with magnetic field effects.
Findings
Charge tuning from -3|e| to +2|e| in GaAs QDs.
Observation of excited valence and conduction states.
Negative diamagnetic shift in excited charged excitons.
Abstract
We demonstrate charge tuning in strain free GaAs/AlGaAs quantum dots (QDs) grown by droplet epitaxy on a GaAs(111)A substrate. Application of a bias voltage allows the controlled charging of the QDs from to . The resulting changes in QD emission energy and exciton fine-structure are recorded in micro-photoluminescence experiments at T=4K. We uncover the existence of excited valence and conduction states, in addition to the s-shell-like ground state. We record a second series of emission lines about 25meV above the charged exciton emission coming from excited charged excitons. For these excited interband transitions a negative diamagnetic shift of large amplitude is uncovered in longitudinal magnetic fields.
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Taxonomy
TopicsSemiconductor Quantum Structures and Devices · Quantum and electron transport phenomena · Semiconductor Lasers and Optical Devices
