Macro- and microscopic properties of strontium doped indium oxide

TL;DR

This study investigates the electrical and gas sensing properties of strontium-doped indium oxide, revealing significant conductivity changes, fast oxygen exchange at moderate temperatures, and microscopic diffusion characteristics related to doping levels.

Contribution

It provides new insights into the mechanisms of conductivity variation and oxygen exchange in Sr-doped In2O3, highlighting the role of surface structure and phase formation.

Findings

Conductivity and gas sensing ability increase significantly with doping level.

High-level doping enables rapid oxygen exchange at moderate temperatures.

Oxygen vacancy diffusion coefficient in the surface layer is estimated at 3x10^(-13) cm^2/s.

Abstract

Solid state synthesis and physical mechanisms of electrical conductivity variation in polycrystalline, strontium doped indium oxide In2O3:(SrO)x were investigated for materials with different doping levels at different temperatures (T=20-300 C) and ambient atmosphere content including humidity and low pressure. Gas sensing ability of these compounds as well as the sample resistance appeared to increase by 4 and 8 orders of the magnitude, respectively, with the doping level increase from zero up to x=10%. The conductance variation due to doping is explained by two mechanisms: acceptor-like electrical activity of Sr as a point defect and appearance of an additional phase of SrIn2O4. An unusual property of high level (x=10%) doped samples is a possibility of extraordinarily large and fast oxygen exchange with ambient atmosphere at not very high temperatures (100-200 C). This peculiarity is explained by friable structure of crystallite surface. Friable structure provides relatively fast transition of samples from high to low resistive state at the expense of high conductance of the near surface layer of the grains. Microscopic study of the electro-diffusion process at the surface of oxygen deficient samples allowed estimation of the diffusion coefficient of oxygen vacancies in the friable surface layer at room temperature as 3x10^(-13) cm^2/s, which is by one order of the magnitude smaller than that known for amorphous indium oxide films.