Review: Towards Spintronic Quantum Technologies with Dopants in Silicon

TL;DR

This review discusses the development of spintronic quantum technologies using dopants in silicon, highlighting advances in single-spin readout and atomic-scale fabrication from 2009 to 2014.

Contribution

It provides a comprehensive overview of experimental and theoretical progress in silicon dopant-based quantum technologies over recent years.

Findings

Single-spin readout demonstrated

Atomic-scale Si:P structures fabricated

Long coherence times of dopant spins

Abstract

Dopants in crystalline silicon such as phosphorus (Si:P) have electronic and nuclear spins with exceptionally long coherence times making them promising platforms for quantum computing and quantum sensing. The demonstration of single-spin single-shot readout brings these ideas closer to implementation. Progress in fabricating atomic-scale Si:P structures with scanning tunnelling microscopes offers a powerful route to scale up this work, taking advantage of techniques developed by the computing industry. The experimental and theoretical sides of this emerging quantum technology are reviewed with a focus on the period from 2009 to mid-2014.