Multiscale model for phonon-assisted band-to-band tunneling in semiconductors

TL;DR

This paper introduces a multiscale TCAD-compatible model for phonon-assisted band-to-band tunneling in semiconductors, accurately capturing experimental data and aiding the design of advanced electronic devices.

Contribution

It presents a novel multiscale model that incorporates non-parabolic complex bands for improved prediction of BTBT in semiconductors.

Findings

Model accurately fits silicon I-V data along multiple crystal directions.

Incorporates non-parabolic band effects for realistic tunneling simulations.

Useful for predicting tunneling currents in advanced FETs and MOSFETs.

Abstract

We present a TCAD compatible multiscale model of phonon-assisted band-to-band tunneling (BTBT) in semiconductors, that incorporates the non-parabolic nature of complex bands within the bandgap of the material. This model is shown capture the measured current-voltage data in silicon, for current transport along the $[100]$, $[110]$ and $[111]$ directions. Our model will be useful to predict band-to-band tunneling phenomena to quantify on and off currents in Tunnel FETs and in small geometry MOSFETs and FINFETs.