Calculation of the Electron Spin Relaxation Times in InSb and InAs by the Projection-Reduction Method

TL;DR

This paper calculates electron spin relaxation times in InSb and InAs using the projection-reduction method, revealing temperature and magnetic field dependencies and identifying the Elliot-Yafet process as a key relaxation mechanism.

Contribution

It introduces a calculation of spin relaxation times in InSb and InAs considering spin-orbit interactions and piezoelectric phonons using the projection-reduction method, with material constants derived from experimental data.

Findings

Relaxation times depend on temperature and magnetic field similarly in InSb and InAs.

Piezoelectric constants are estimated as 4.0 x 10^21 eV/m for InSb and 6.7 x 10^21 eV/m for InAs.

Electron spin relaxation can be explained by the Elliot-Yafet process at high magnetic fields.

Abstract

The electron spin relaxation times in a system of electrons interacting with piezoelectric phonons mediated through spin-orbit interactions were calculated using the formula derived from the projection-reduction method. The results showed that the temperature and magnetic field dependence of the relaxation times in InSb and InAs were similar. The piezoelectric material constants obtained by a comparison with the reported experimental result were Ppe = 4.0 x 10^21 eV/m for InSb and Ppe = 6.7 x 10^21 eV/m for InAs. The relaxation of the electron spin can be explained by the Elliot-Yafet process at a high field limit.