Direct epitaxial integration of the ferromagnetic semiconductor EuO with silicon for spintronic applications

TL;DR

This paper presents a novel technique for directly growing high-quality EuO ferromagnetic semiconductor films on silicon, enabling advancements in silicon-based spintronic devices by overcoming previous epitaxial growth challenges.

Contribution

The authors demonstrate the first direct epitaxial growth of stoichiometric EuO on silicon without buffer layers, using a new interface control technique.

Findings

Successful epitaxial EuO films on silicon with bulk-like properties

Enhanced potential for silicon-based spintronic device integration

New interface control method applicable to functional oxides on Si

Abstract

Materials in which charge and spin degrees of freedom interact strongly offer applications known as spintronics. Following a remarkable success of metallic spintronics based on the giant-magnetoresistive effect, tremendous efforts have been invested into the less developed semiconductor spintronics, in particular, with the aim to produce three-terminal spintronic devices, e.g. spin transistors. One of the most important prerequisites for such a technology is an effective injection of spin-polarized carriers from a ferromagnetic semiconductor into a nonmagnetic semiconductor, preferably one of those currently used for industrial applications such as Si - a workhorse of modern electronics. Ferromagnetic semiconductor EuO is long believed to be the best candidate for integration of magnetic semiconductor with Si. Although EuO proved to offer optimal conditions for effective spin injection into silicon and in spite of considerable efforts, the direct epitaxial stabilization of stoichiometric EuO thin films on Si without any buffer layer has not been demonstrated to date. Here we report a new technique for control of EuO/Si interface on submonolayer level which may have general implications for the growth of functional oxides on Si. Using this technique we solve a long-standing problem of direct epitaxial growth on silicon of thin EuO films which exhibit structural and magnetic properties of EuO bulk material. This result opens up new possibilities in developing all-semiconductor spintronic devices.